SIS322DNT-T1-GE3 Vishay / Siliconix

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.6A; Idm: 70A, Type of transistor: N-MOSFET, Kind of channel: enhancement, Technology: TrenchFET®, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Pulsed drain current: 70A, Drain current: 30.6A, Drain-source voltage: 30V, Gate-source voltage: -16...20V, Gate charge: 21.5nC, On-state resistance: 12mΩ, Power dissipation: 12.7W, Case: PowerPAK® 1212-8, Anzahl je Verpackung: 1 Stücke.