auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS402DN-T1-GE3 Vishay
Description: MOSFET N-CH 30V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V.
Weitere Produktangebote SIS402DN-T1-GE3 nach Preis ab 1.29 EUR bis 4.42 EUR
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SIS402DN-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 35A PPAK1212-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS402DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 11131 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS402DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
auf Bestellung 4271 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS402DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS402DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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SIS402DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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| SIS402DN-T1-GE3 | Hersteller : VISHAY |
SIS402DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |