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Technische Details SIS402DN-T1-GE3 Vishay
Description: MOSFET N-CH 30V 35A PPAK1212-8, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote SIS402DN-T1-GE3 nach Preis ab 1.54 EUR bis 5.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SIS402DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 35A PPAK1212-8Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS402DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 10234 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS402DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK1212-8 Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel |
auf Bestellung 4271 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIS402DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 30V 35A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.54 EUR |
| SIS402DN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 10234 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.01 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.68 EUR |
| 3000+ | 1.59 EUR |
| SIS402DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 30V 35A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
auf Bestellung 4271 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.26 EUR |
| 10+ | 3.39 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.73 EUR |