SIS429DNT-T1-GE3 Vishay / Siliconix
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.26 EUR |
| 3000+ | 0.23 EUR |
| 9000+ | 0.19 EUR |
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Technische Details SIS429DNT-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 30V 20A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V, Power Dissipation (Max): 27.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V.
Weitere Produktangebote SIS429DNT-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIS429DNT-T1-GE3 | Hersteller : Vishay |
 P-CHANNEL 30 V (D-S) MOSFET |
Produkt ist nicht verfügbar |
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| SIS429DNT-T1-GE3 | Hersteller : VISHAY |
SIS429DNT-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIS429DNT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 20A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
Produkt ist nicht verfügbar |