SIS429DNT-T1-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.38 EUR |
| 3000+ | 0.32 EUR |
| 6000+ | 0.21 EUR |
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Technische Details SIS429DNT-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 30V 20A PPAK1212-8, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 27.8W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIS429DNT-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SIS429DNT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 30V 20A PPAK1212-8Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 27.8W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIS429DNT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 20A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 27.8W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 20A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 27.8W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH