| Anzahl | Privatkunde |
|---|---|
| 172+ | 1.04 EUR |
| 175+ | 1.01 EUR |
| 178+ | 0.96 EUR |
| 250+ | 0.93 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.87 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
172 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS443DN-T1-GE3 Vishay
Description: VISHAY - SIS443DN-T1-GE3 - MOSFET, P-CH, -40V, -35A, 150DEG C, 52W, tariffCode: 85412900, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 40V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 35A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 2.3V, Verlustleistung: 52W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: P Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0117ohm, directShipCharge: 25.
Weitere Produktangebote SIS443DN-T1-GE3 nach Preis ab 0.75 EUR bis 4.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SIS443DN-T1-GE3 | Vishay |
 Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 35A PPAK 1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 20 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS443DN-T1-GE3 | Vishay |
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Vishay |
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Vishay |
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 19951 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 35A PPAK 1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 20 V |
auf Bestellung 27135 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIS443DN-T1-GE3 | Vishay Siliconix |
P-канальний ПТ, Udss, В = 40, Id = 35 А, Ciss, пФ @ Uds, В = 4370, Qg, нКл = 135, Rds = 11,7 мОм, Ugs(th) = 2,3 В, Р, Вт = 52, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: PowerPAK® 1212-8 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 13 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| SIS443DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 170+ | 1.05 EUR |
| 172+ | 1 EUR |
| 175+ | 0.95 EUR |
| 178+ | 0.89 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.75 EUR |
| SIS443DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 20 V
Description: MOSFET P-CH 40V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 20 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.2 EUR |
| 6000+ | 1.15 EUR |
| SIS443DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.38 EUR |
| SIS443DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.38 EUR |
| SIS443DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 19951 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 115+ | 1.56 EUR |
| 120+ | 1.46 EUR |
| 250+ | 1.38 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.24 EUR |
| 2500+ | 1.18 EUR |
| 5000+ | 1.12 EUR |
| 10000+ | 1.09 EUR |
| SIS443DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 20 V
Description: MOSFET P-CH 40V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 20 V
auf Bestellung 27135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.3 EUR |
| 10+ | 2.74 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.36 EUR |
| SIS443DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
P-канальний ПТ, Udss, В = 40, Id = 35 А, Ciss, пФ @ Uds, В = 4370, Qg, нКл = 135, Rds = 11,7 мОм, Ugs(th) = 2,3 В, Р, Вт = 52, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: PowerPAK® 1212-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
P-канальний ПТ, Udss, В = 40, Id = 35 А, Ciss, пФ @ Uds, В = 4370, Qg, нКл = 135, Rds = 11,7 мОм, Ugs(th) = 2,3 В, Р, Вт = 52, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: PowerPAK® 1212-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 13 Stücke: