SIS452DN-T1-GE3 Vishay / Siliconix
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Technische Details SIS452DN-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 12V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 3.25mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 6 V.
Weitere Produktangebote SIS452DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIS452DN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 12V 27.9A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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SIS452DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 12V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 6 V |
Produkt ist nicht verfügbar |
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SIS452DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 12V 35A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 6 V |
Produkt ist nicht verfügbar |