SIS4604DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.56 EUR |
| 6000+ | 0.52 EUR |
| 9000+ | 0.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS4604DN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V.
Weitere Produktangebote SIS4604DN-T1-GE3 nach Preis ab 0.52 EUR bis 2.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIS4604DN-T1-GE3 | Vishay |
MOSFETs POWRPK N CHAN 60V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SIS4604DN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
auf Bestellung 10520 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIS4604DN-T1-GE3 |
|
Hersteller: Vishay
MOSFETs POWRPK N CHAN 60V
MOSFETs POWRPK N CHAN 60V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.99 EUR |
| 10+ | 1.29 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| 3000+ | 0.55 EUR |
| 6000+ | 0.52 EUR |
| SIS4604DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 10520 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 13+ | 1.36 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |