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SIS5712DN-T1-GE3

SIS5712DN-T1-GE3 Vishay Siliconix

doc?62070 Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 55.5mOhm @ 5.6A, 10V
Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 75 V
auf Bestellung 2340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.88 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.97 EUR
Mindestbestellmenge: 6
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Technische Details SIS5712DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 150V 2.2A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 55.5mOhm @ 5.6A, 10V, Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 75 V.

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SIS5712DN-T1-GE3 SIS5712DN-T1-GE3 Hersteller : Vishay / Siliconix doc?62070 MOSFETs N-CHANNEL 150-V (D-S) MOSFET
auf Bestellung 12198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.03 EUR
10+1.92 EUR
100+1.28 EUR
500+1.05 EUR
3000+0.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIS5712DN-T1-GE3 SIS5712DN-T1-GE3 Hersteller : Vishay Siliconix doc?62070 Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 55.5mOhm @ 5.6A, 10V
Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 75 V
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Im Einkaufswagen  Stück im Wert von  UAH