SIS606BDN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.94 EUR |
| 6000+ | 0.89 EUR |
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Technische Details SIS606BDN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIS606BDN-T1-GE3 nach Preis ab 0.85 EUR bis 2.43 EUR
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SIS606BDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
auf Bestellung 6370 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS606BDN-T1-GE3 | Vishay / Siliconix |
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 114321 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIS606BDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 6370 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1 EUR |
| SIS606BDN-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 114321 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| 3000+ | 0.86 EUR |
| 6000+ | 0.85 EUR |