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SIS606BDN-T1-GE3

SIS606BDN-T1-GE3 Vishay Siliconix

sis606bdn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.94 EUR
6000+0.89 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIS606BDN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 100V 9.4A/35.3A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc), Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V.

Weitere Produktangebote SIS606BDN-T1-GE3 nach Preis ab 0.89 EUR bis 2.5 EUR

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SIS606BDN-T1-GE3 SIS606BDN-T1-GE3 Hersteller : Vishay Siliconix sis606bdn.pdf Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 35.3A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
auf Bestellung 6370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
10+1.86 EUR
100+1.44 EUR
500+1.22 EUR
1000+1 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIS606BDN-T1-GE3 SIS606BDN-T1-GE3 Hersteller : Vishay / Siliconix sis606bdn.pdf MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 114651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.5 EUR
10+1.92 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.02 EUR
3000+0.9 EUR
6000+0.89 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIS606BDN-T1-GE3 Hersteller : VISHAY sis606bdn.pdf SIS606BDN-T1-GE3 SMD N channel transistors
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