SIS782DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.4 EUR |
| 6000+ | 0.37 EUR |
| 9000+ | 0.35 EUR |
| 15000+ | 0.34 EUR |
| 21000+ | 0.33 EUR |
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Technische Details SIS782DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V.
Weitere Produktangebote SIS782DN-T1-GE3 nach Preis ab 0.43 EUR bis 1.64 EUR
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SIS782DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 2971 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS782DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 16A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V |
auf Bestellung 22849 Stücke: Lieferzeit 10-14 Tag (e) |
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