SIS892DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 611 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.18 EUR |
| 6000+ | 1.11 EUR |
| 9000+ | 1.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS892DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 611 pF @ 50 V.
Weitere Produktangebote SIS892DN-T1-GE3 nach Preis ab 0.81 EUR bis 4.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SIS892DN-T1-GE3 | Vishay |
Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 1458 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS892DN-T1-GE3 | Vishay |
Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 1458 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS892DN-T1-GE3 | VISHAY |
Description: VISHAY - SIS892DN-T1-GE3 - MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 0 Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS892DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 100V 30A 43W 29 mohms @ 10V |
auf Bestellung 3401 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS892DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 30A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 611 pF @ 50 V |
auf Bestellung 17472 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIS892DN-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK 1212 EP T/R
Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 1458 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 116+ | 1.51 EUR |
| 117+ | 1.48 EUR |
| 136+ | 1.24 EUR |
| 250+ | 1.2 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.94 EUR |
| SIS892DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK 1212 EP T/R
Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 1458 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 102+ | 1.71 EUR |
| 116+ | 1.45 EUR |
| 117+ | 1.39 EUR |
| 136+ | 1.14 EUR |
| 250+ | 1.09 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.81 EUR |
| SIS892DN-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIS892DN-T1-GE3 - MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 0
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
MSL: MSL 1 - Unlimited
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.2V
euEccn: NLR
Verlustleistung: 0
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0
directShipCharge: 25
SVHC: Lead
Description: VISHAY - SIS892DN-T1-GE3 - MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 0
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
MSL: MSL 1 - Unlimited
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.2V
euEccn: NLR
Verlustleistung: 0
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0
directShipCharge: 25
SVHC: Lead
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.95 EUR |
| SIS892DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 100V 30A 43W 29 mohms @ 10V
MOSFETs 100V 30A 43W 29 mohms @ 10V
auf Bestellung 3401 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.96 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.24 EUR |
| 3000+ | 1.14 EUR |
| 6000+ | 1.08 EUR |
| SIS892DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 611 pF @ 50 V
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 611 pF @ 50 V
auf Bestellung 17472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.21 EUR |
| 10+ | 2.68 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.33 EUR |