auf Bestellung 1458 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 116+ | 1.26 EUR |
| 117+ | 1.2 EUR |
| 136+ | 0.99 EUR |
| 250+ | 0.95 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS892DN-T1-GE3 Vishay
Description: MOSFET N-CH 100V 30A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 611 pF @ 50 V.
Weitere Produktangebote SIS892DN-T1-GE3 nach Preis ab 0.67 EUR bis 2.69 EUR
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SIS892DN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 1458 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS892DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 30A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 611 pF @ 50 V |
auf Bestellung 832 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS892DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 100V 30A 43W 29 mohms @ 10V |
auf Bestellung 8636 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS892DN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIS892DN-T1-GE3 - MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 0 Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS892DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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SIS892DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 30A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 611 pF @ 50 V |
Produkt ist nicht verfügbar |