SIS903DN-T1-GE3
Produktcode: 182732
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Weitere Produktangebote SIS903DN-T1-GE3 nach Preis ab 0.63 EUR bis 2.87 EUR
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SIS903DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 6A PPAK 1212 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS903DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 6A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 16758 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS903DN-T1-GE3 | Vishay / Siliconix |
MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 |
auf Bestellung 2627 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIS903DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET 2P-CH 20V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.69 EUR |
| 6000+ | 0.64 EUR |
| 9000+ | 0.63 EUR |
| SIS903DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET 2P-CH 20V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 16758 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 11+ | 1.63 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.79 EUR |
| SIS903DN-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8
MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8
auf Bestellung 2627 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 2.87 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.86 EUR |
| 3000+ | 0.74 EUR |