SIS903DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2P-CH 20V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.6 EUR |
| 6000+ | 0.56 EUR |
| 9000+ | 0.54 EUR |
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Technische Details SIS903DN-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Ta), 23W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V, Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
Weitere Produktangebote SIS903DN-T1-GE3 nach Preis ab 0.41 EUR bis 2.29 EUR
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SIS903DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 4338 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS903DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 4338 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS903DN-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 |
auf Bestellung 25880 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS903DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 6A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 15422 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS903DN-T1-GE3 Produktcode: 182732
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Transistoren > Transistoren P-Kanal-Feld |
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SIS903DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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SIS903DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |