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SIS9634LDN-T1-GE3

SIS9634LDN-T1-GE3 Vishay Siliconix


sis9634ldn.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 17.9W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.88 EUR
6000+0.84 EUR
9000+0.8 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIS9634LDN-T1-GE3 Vishay Siliconix

Description: DUAL N-CHANNEL 60 V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), 17.9W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.

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SIS9634LDN-T1-GE3 SIS9634LDN-T1-GE3 Vishay Siliconix sis9634ldn.pdf Description: DUAL N-CHANNEL 60 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 17.9W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 11930 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.13 EUR
11+1.75 EUR
100+1.36 EUR
500+1.15 EUR
1000+0.94 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SIS9634LDN-T1-GE3 SIS9634LDN-T1-GE3 Vishay / Siliconix sis9634ldn.pdf MOSFETs POWRPK N CHAN 60V
auf Bestellung 2780 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.85 EUR
10+1.83 EUR
100+1.22 EUR
500+0.96 EUR
1000+0.88 EUR
3000+0.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIS9634LDN-T1-GE3 sis9634ldn.pdf
SIS9634LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 17.9W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 11930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
11+1.75 EUR
100+1.36 EUR
500+1.15 EUR
1000+0.94 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SIS9634LDN-T1-GE3 sis9634ldn.pdf
SIS9634LDN-T1-GE3
Hersteller: Vishay / Siliconix
MOSFETs POWRPK N CHAN 60V
auf Bestellung 2780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.85 EUR
10+1.83 EUR
100+1.22 EUR
500+0.96 EUR
1000+0.88 EUR
3000+0.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH