SISA10DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK1212-8
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
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Technische Details SISA10DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK1212-8, Power Dissipation (Max): 3.6W (Ta), 39W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA.
Weitere Produktangebote SISA10DN-T1-GE3 nach Preis ab 0.7 EUR bis 2.55 EUR
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SISA10DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 30A PPAK1212-8 Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
auf Bestellung 5263 Stücke: Lieferzeit 10-14 Tag (e) |
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SISA10DN-T1-GE3 | Vishay Semiconductors |
MOSFETs For New Design See: 78-SISHA10DN-T1-GE3 |
auf Bestellung 3591 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SISA10DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 30A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 5263 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.83 EUR |
| 11+ | 1.64 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.83 EUR |
| SISA10DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs For New Design See: 78-SISHA10DN-T1-GE3
MOSFETs For New Design See: 78-SISHA10DN-T1-GE3
auf Bestellung 3591 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.55 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.77 EUR |
| 3000+ | 0.71 EUR |
| 6000+ | 0.7 EUR |