SISA12BDN-T1-GE3 Vishay Siliconix

Description: N-CHANNEL 30-V (D-S) MOSFET POWE, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 87A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Power Dissipation (Max): 4W (Ta), 52W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.4V @ 250µA.