SISA72ADN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 25.4A/94A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.5 EUR |
| 6000+ | 0.46 EUR |
| 9000+ | 0.44 EUR |
| 15000+ | 0.43 EUR |
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Technische Details SISA72ADN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 25.4A/94A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc), Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V.
Weitere Produktangebote SISA72ADN-T1-GE3 nach Preis ab 0.56 EUR bis 1.95 EUR
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SISA72ADN-T1-GE3 | Vishay Semiconductors |
MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8 |
auf Bestellung 10977 Stücke: Lieferzeit 607-611 Tag (e) |
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SISA72ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 25.4A/94A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V |
auf Bestellung 21039 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISA72ADN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8
MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8
auf Bestellung 10977 Stücke:
Lieferzeit 607-611 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.56 EUR |
| SISA72ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 25.4A/94A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V
Description: MOSFET N-CH 40V 25.4A/94A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V
auf Bestellung 21039 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.95 EUR |
| 15+ | 1.22 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |