| Anzahl | Preis |
|---|---|
| 518+ | 0.28 EUR |
| 523+ | 0.26 EUR |
| 531+ | 0.25 EUR |
| 537+ | 0.24 EUR |
| 540+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SISA72DN-T1-GE3 Vishay
Description: MOSFET N-CH 40V 60A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 20 V.
Weitere Produktangebote SISA72DN-T1-GE3 nach Preis ab 0.21 EUR bis 2.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SISA72DN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 18390 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SISA72DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SISA72DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 131097 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SISA72DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 20 V |
auf Bestellung 7173 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SISA72DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| SISA72DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 33.3W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |