SISF02DN-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.46 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.1 EUR |
| 3000+ | 1.04 EUR |
| 6000+ | 0.99 EUR |
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Technische Details SISF02DN-T1-GE3 Vishay Semiconductors
Description: MOSFET DUAL N-CH 25V 1212-8, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8SCD, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc), Drain to Source Voltage (Vdss): 25V, Power - Max: 5.2W (Ta), 69.4W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SCD, Packaging: Tape & Reel (TR).
Weitere Produktangebote SISF02DN-T1-GE3 nach Preis ab 2.29 EUR bis 2.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|---|---|
| SISF02DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET DUAL N-CH 25V 1212-8Part Status: Active Supplier Device Package: PowerPAK® 1212-8SCD Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc) Drain to Source Voltage (Vdss): 25V Power - Max: 5.2W (Ta), 69.4W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Packaging: Cut Tape (CT) |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISF02DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 25V 1212-8
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
Description: MOSFET DUAL N-CH 25V 1212-8
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 10+ | 2.29 EUR |