SISF04DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PWRPAK1212
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.87 EUR |
| 6000+ | 0.81 EUR |
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Technische Details SISF04DN-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PWRPAK1212, Supplier Device Package: PowerPAK® 1212-8SCD, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V, Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 5.2W (Ta), 69.4W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SCD, Packaging: Tape & Reel (TR).
Weitere Produktangebote SISF04DN-T1-GE3 nach Preis ab 0.89 EUR bis 3.17 EUR
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SISF04DN-T1-GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 30V(S1-S2) PowerPAK 1212-8F |
auf Bestellung 5040 Stücke: Lieferzeit 10-14 Tag (e) |
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SISF04DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 30A PWRPAK1212 Supplier Device Package: PowerPAK® 1212-8SCD Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 5.2W (Ta), 69.4W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Packaging: Cut Tape (CT) |
auf Bestellung 11206 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISF04DN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 30V(S1-S2) PowerPAK 1212-8F
MOSFETs N-CHANNEL 30V(S1-S2) PowerPAK 1212-8F
auf Bestellung 5040 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 2.87 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.22 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.9 EUR |
| 3000+ | 0.89 EUR |
| SISF04DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PWRPAK1212
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 30A PWRPAK1212
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
auf Bestellung 11206 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.17 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |