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SISF54DN-T1-GE3

SISF54DN-T1-GE3 Vishay

sizf54dn.pdf
Hersteller: Vishay
MOSFETs COMMON-DRAIN DUAL N-CH 30V (S1-S2)MO
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Technische Details SISF54DN-T1-GE3 Vishay

Description: COMMON-DRAIN DUAL N-CH 30V (S1-S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SCD, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 5.2W (Ta), 69.4W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 118A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V, Rds On (Max) @ Id, Vgs: 3.1mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SCD.

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SISF54DN-T1-GE3 Vishay Siliconix sizf54dn.pdf Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 118A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SISF54DN-T1-GE3 sizf54dn.pdf
Hersteller: Vishay Siliconix
Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 118A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH