SISH108DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
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Technische Details SISH108DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8SH, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8SH, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SH, Packaging: Tape & Reel (TR).
Weitere Produktangebote SISH108DN-T1-GE3 nach Preis ab 0.46 EUR bis 1.31 EUR
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SISH108DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 14A PPAK1212-8SH Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V |
auf Bestellung 5871 Stücke: Lieferzeit 10-14 Tag (e) |
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SISH108DN-T1-GE3 | Vishay Semiconductors |
MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH |
auf Bestellung 5175 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISH108DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
auf Bestellung 5871 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 41+ | 0.52 EUR |
| 100+ | 0.46 EUR |
| SISH108DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH
MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH
auf Bestellung 5175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.31 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.6 EUR |
| 9000+ | 0.58 EUR |
| 24000+ | 0.57 EUR |