SISH110DN-T1-GE3 Vishay Semiconductors
auf Bestellung 5419 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details SISH110DN-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 20V 13.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V.
Weitere Produktangebote SISH110DN-T1-GE3 nach Preis ab 2.7 EUR bis 2.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SISH110DN-T1-GE3 | Hersteller : Vishay |
 N-Channel MOSFET; 20V; 20V; 7,8mOhm; 13,5A; 1,5W; -55°C ~ 150°C; SISH110DN-T1-GE3 Vishay Siliconix TSISH110dnAnzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| SISH110DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 16.9A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SISH110DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 13.5A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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SISH110DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 13.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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| SISH110DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 16.9A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |