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SISH434DN-T1-GE3

SISH434DN-T1-GE3 Vishay Siliconix

sish434dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 17.6A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.74 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SISH434DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 17.6A/35A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V.

Weitere Produktangebote SISH434DN-T1-GE3 nach Preis ab 0.77 EUR bis 2.20 EUR

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SISH434DN-T1-GE3 SISH434DN-T1-GE3 Hersteller : Vishay Semiconductors sish434dn.pdf MOSFET 40V Vds; +/-20V Vgs PowerPAK 1212-8SH
auf Bestellung 18637 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.85 EUR
10+1.51 EUR
100+1.17 EUR
500+0.99 EUR
1000+0.81 EUR
3000+0.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SISH434DN-T1-GE3 SISH434DN-T1-GE3 Hersteller : Vishay Siliconix sish434dn.pdf Description: MOSFET N-CH 40V 17.6A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
auf Bestellung 5695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.20 EUR
12+1.52 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.85 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SISH434DN-T1-GE3 Hersteller : VISHAY sish434dn.pdf SISH434DN-T1-GE3 SMD N channel transistors
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