auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.34 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.50 EUR |
| 6000+ | 0.48 EUR |
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Technische Details SISHA12ADN-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 22A/25A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, Power Dissipation (Max): 3.5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V.
Weitere Produktangebote SISHA12ADN-T1-GE3 nach Preis ab 0.59 EUR bis 1.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SISHA12ADN-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 22A/25A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V |
auf Bestellung 2943 Stücke: Lieferzeit 10-14 Tag (e) |
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SISHA12ADN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212-SH EP T/R |
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SISHA12ADN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212-SH EP T/R |
Produkt ist nicht verfügbar |
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| SISHA12ADN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 18W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Pulsed drain current: 80A Power dissipation: 18W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SISHA12ADN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 22A/25A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SISHA12ADN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 18W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Pulsed drain current: 80A Power dissipation: 18W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |