
SISS02DN-T1-GE3 Vishay Semiconductors
auf Bestellung 6760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.48 EUR |
10+ | 1.47 EUR |
100+ | 1.35 EUR |
500+ | 1.08 EUR |
1000+ | 1.02 EUR |
6000+ | 1 EUR |
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Technische Details SISS02DN-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 25V 51A/80A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V.
Weitere Produktangebote SISS02DN-T1-GE3 nach Preis ab 1.01 EUR bis 2.5 EUR
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SISS02DN-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V |
auf Bestellung 2028 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS02DN-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 80A; Idm: 300A; 42W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Gate-source voltage: -12...16V Gate charge: 83nC On-state resistance: 1.83mΩ Drain-source voltage: 25V Power dissipation: 42W Drain current: 80A Pulsed drain current: 300A Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SISS02DN-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V |
Produkt ist nicht verfügbar |
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SISS02DN-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 80A; Idm: 300A; 42W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Gate-source voltage: -12...16V Gate charge: 83nC On-state resistance: 1.83mΩ Drain-source voltage: 25V Power dissipation: 42W Drain current: 80A Pulsed drain current: 300A Kind of channel: enhancement |
Produkt ist nicht verfügbar |