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SISS02DN-T1-GE3

SISS02DN-T1-GE3 Vishay Siliconix

vis-siss02dn-t1-ge3.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 51A/80A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
12+1.49 EUR
100+1.35 EUR
500+1.15 EUR
1000+1.04 EUR
Mindestbestellmenge: 7
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Technische Details SISS02DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 25V 51A/80A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V.

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SISS02DN-T1-GE3 SISS02DN-T1-GE3 Hersteller : Vishay Semiconductors vis-siss02dn-t1-ge3.pdf MOSFETs 25V Vds 16V Vgs PowerPAK 1212-8S
auf Bestellung 8721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.64 EUR
10+1.71 EUR
100+1.39 EUR
500+1.18 EUR
1000+1.02 EUR
6000+1.01 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SISS02DN-T1-GE3 Hersteller : VISHAY vis-siss02dn-t1-ge3.pdf SISS02DN-T1-GE3 SMD N channel transistors
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SISS02DN-T1-GE3 SISS02DN-T1-GE3 Hersteller : Vishay Siliconix vis-siss02dn-t1-ge3.pdf Description: MOSFET N-CH 25V 51A/80A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH