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SISS06DN-T1-GE3

SISS06DN-T1-GE3 Vishay Siliconix

siss06dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 47.6/172.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.6A (Ta), 172.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.74 EUR
Mindestbestellmenge: 3000
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Technische Details SISS06DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 47.6/172.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47.6A (Ta), 172.6A (Tc), Rds On (Max) @ Id, Vgs: 1.38mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V.

Weitere Produktangebote SISS06DN-T1-GE3 nach Preis ab 0.79 EUR bis 2.63 EUR

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SISS06DN-T1-GE3 SISS06DN-T1-GE3 Hersteller : Vishay Siliconix siss06dn.pdf Description: MOSFET N-CH 30V 47.6/172.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.6A (Ta), 172.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
auf Bestellung 7270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.8 EUR
13+ 1.46 EUR
100+ 1.14 EUR
500+ 0.96 EUR
1000+ 0.79 EUR
Mindestbestellmenge: 10
SISS06DN-T1-GE3 SISS06DN-T1-GE3 Hersteller : Vishay Semiconductors siss06dn.pdf MOSFET 30V Vds; 20/-16V Vgs PowerPAK 1212-8S
auf Bestellung 7332 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.63 EUR
24+ 2.17 EUR
100+ 1.69 EUR
500+ 1.43 EUR
1000+ 1.17 EUR
3000+ 1.1 EUR
6000+ 1.05 EUR
Mindestbestellmenge: 20
SISS06DN-T1-GE3 Hersteller : VISHAY siss06dn.pdf SISS06DN-T1-GE3 SMD N channel transistors
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SISS06DN-T1-GE3 SISS06DN-T1-GE3 Hersteller : Vishay siss06dn.pdf Trans MOSFET N-CH 30V 47.6A 8-Pin PowerPAK 1212 EP T/R
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