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SISS06DN-T1-GE3

SISS06DN-T1-GE3 Vishay Siliconix

siss06dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 47.6/172.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.6A (Ta), 172.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.76 EUR
6000+0.71 EUR
9000+0.70 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SISS06DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 47.6/172.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47.6A (Ta), 172.6A (Tc), Rds On (Max) @ Id, Vgs: 1.38mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V.

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SISS06DN-T1-GE3 SISS06DN-T1-GE3 Hersteller : Vishay Semiconductors siss06dn.pdf MOSFET 30V Vds; 20/-16V Vgs PowerPAK 1212-8S
auf Bestellung 7332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.78 EUR
10+1.47 EUR
100+1.14 EUR
500+0.97 EUR
1000+0.79 EUR
3000+0.74 EUR
6000+0.71 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SISS06DN-T1-GE3 SISS06DN-T1-GE3 Hersteller : Vishay Siliconix siss06dn.pdf Description: MOSFET N-CH 30V 47.6/172.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.6A (Ta), 172.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
auf Bestellung 13105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.80 EUR
100+1.20 EUR
500+0.95 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SISS06DN-T1-GE3 Hersteller : VISHAY siss06dn.pdf SISS06DN-T1-GE3 SMD N channel transistors
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SISS06DN-T1-GE3 SISS06DN-T1-GE3 Hersteller : Vishay siss06dn.pdf Trans MOSFET N-CH 30V 47.6A 8-Pin PowerPAK 1212 EP T/R
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