Produkte > VISHAY SILICONIX > SISS08DN-T1-GE3
SISS08DN-T1-GE3

SISS08DN-T1-GE3 Vishay Siliconix

siss08dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 53.9/195.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 12.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.8 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SISS08DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 25V 53.9/195.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc), Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 12.5 V.

Weitere Produktangebote SISS08DN-T1-GE3 nach Preis ab 0.7 EUR bis 1.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SISS08DN-T1-GE3 SISS08DN-T1-GE3 Hersteller : Vishay Semiconductors siss08dn.pdf MOSFET 25V Vds; 20/-16V Vgs PowerPAK 1212-8S
auf Bestellung 4603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.8 EUR
10+ 1.47 EUR
100+ 1.15 EUR
500+ 0.97 EUR
1000+ 0.79 EUR
3000+ 0.74 EUR
6000+ 0.7 EUR
Mindestbestellmenge: 2
SISS08DN-T1-GE3 SISS08DN-T1-GE3 Hersteller : Vishay Siliconix siss08dn.pdf Description: MOSFET N-CH 25V 53.9/195.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 12.5 V
auf Bestellung 5965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.88 EUR
11+ 1.69 EUR
100+ 1.32 EUR
500+ 1.09 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 10
SISS08DN-T1-GE3 Hersteller : VISHAY siss08dn.pdf SISS08DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar