Produkte > VISHAY / SILICONIX > SISS10DN-T1-GE3
SISS10DN-T1-GE3

SISS10DN-T1-GE3 Vishay / Siliconix


siss10dn.pdf Hersteller: Vishay / Siliconix
MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8S
auf Bestellung 11665 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.04 EUR
10+1.37 EUR
100+0.96 EUR
500+0.94 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SISS10DN-T1-GE3 Vishay / Siliconix

Description: MOSFET N-CH 40V 60A PPAK 1212-8S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V.

Weitere Produktangebote SISS10DN-T1-GE3 nach Preis ab 0.76 EUR bis 2.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SISS10DN-T1-GE3 SISS10DN-T1-GE3 Hersteller : Vishay Siliconix siss10dn.pdf Description: MOSFET N-CH 40V 60A PPAK 1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V
auf Bestellung 2404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
13+1.41 EUR
100+0.98 EUR
500+0.86 EUR
1000+0.76 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SISS10DN-T1-GE3 Hersteller : VISHAY siss10dn.pdf SISS10DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SISS10DN-T1-GE3 SISS10DN-T1-GE3 Hersteller : Vishay Siliconix siss10dn.pdf Description: MOSFET N-CH 40V 60A PPAK 1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH