SISS22LDN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 25.5A/92.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 92.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.79 EUR |
| 6000+ | 0.75 EUR |
| 9000+ | 0.72 EUR |
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Technische Details SISS22LDN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 25.5A/92.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 92.5A (Tc), Rds On (Max) @ Id, Vgs: 3.65mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 30 V.
Weitere Produktangebote SISS22LDN-T1-GE3 nach Preis ab 0.78 EUR bis 1.92 EUR
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SISS22LDN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-CHANNEL 60V PowerPAK 1212-8S |
auf Bestellung 38828 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS22LDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 25.5A/92.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 92.5A (Tc) Rds On (Max) @ Id, Vgs: 3.65mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 30 V |
auf Bestellung 14390 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS22LDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 74A; Idm: 150A; 42W Mounting: SMD Kind of package: reel; tape Gate charge: 56nC Case: PowerPAK® 1212-8 Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 74A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS22LDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 74A; Idm: 150A; 42W Mounting: SMD Kind of package: reel; tape Gate charge: 56nC Case: PowerPAK® 1212-8 Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 74A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar |
Produkt ist nicht verfügbar |