SiSS28DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 25V 60A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.52mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.54 EUR |
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Technische Details SiSS28DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK1212-8S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.52mOhm @ 15A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 10 V.
Weitere Produktangebote SiSS28DN-T1-GE3 nach Preis ab 0.67 EUR bis 1.49 EUR
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SiSS28DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 60A PPAK1212-8S Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.52mOhm @ 15A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 10 V |
auf Bestellung 5980 Stücke: Lieferzeit 10-14 Tag (e) |
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SiSS28DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs N-Ch 25V Vds 21.8nC Qg Typ |
auf Bestellung 5944 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiSS28DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 75nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: -12...16V Pulsed drain current: 150A Drain-source voltage: 25V Drain current: 60A On-state resistance: 2.24mΩ Type of transistor: N-MOSFET Power dissipation: 36W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SiSS28DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 75nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: -12...16V Pulsed drain current: 150A Drain-source voltage: 25V Drain current: 60A On-state resistance: 2.24mΩ Type of transistor: N-MOSFET Power dissipation: 36W |
Produkt ist nicht verfügbar |