SISS42DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 11.8/40.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.97 EUR |
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Technische Details SISS42DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 11.8/40.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V.
Weitere Produktangebote SISS42DN-T1-GE3 nach Preis ab 0.98 EUR bis 3.43 EUR
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SISS42DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 11.8/40.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V |
auf Bestellung 5955 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS42DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S |
auf Bestellung 17386 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS42DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 38nC On-state resistance: 17mΩ Power dissipation: 36W Gate-source voltage: ±20V Drain current: 32.4A Pulsed drain current: 80A Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS42DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 38nC On-state resistance: 17mΩ Power dissipation: 36W Gate-source voltage: ±20V Drain current: 32.4A Pulsed drain current: 80A Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
Produkt ist nicht verfügbar |