SISS42DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 11.8/40.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
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Technische Details SISS42DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 11.8/40.5A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® 1212-8S, Vgs(th) (Max) @ Id: 3.4V @ 250µA, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8S, Packaging: Tape & Reel (TR).
Weitere Produktangebote SISS42DN-T1-GE3 nach Preis ab 1.37 EUR bis 4.05 EUR
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SISS42DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 11.8/40.5A PPAK Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Cut Tape (CT) |
auf Bestellung 5955 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SISS42DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 11.8/40.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 11.8/40.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
auf Bestellung 5955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.05 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.37 EUR |