SISS42DN-T1-GE3 Vishay Semiconductors
auf Bestellung 17781 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.45 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.61 EUR |
| 250+ | 1.49 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.16 EUR |
| 3000+ | 1.10 EUR |
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Technische Details SISS42DN-T1-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A, Case: PowerPAK® 1212-8, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 32.4A, On-state resistance: 17mΩ, Type of transistor: N-MOSFET, Power dissipation: 36W, Polarisation: unipolar, Gate charge: 38nC, Technology: TrenchFET®, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 80A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SISS42DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SISS42DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 32.4A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 38nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS42DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 32.4A; Idm: 80A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 32.4A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 38nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |