SISS4402DN-T1-GE3 Vishay / Siliconix
Hersteller: Vishay / SiliconixMOSFET N-Channel 100 V (D-S) MOSFET SO-8, 9.3 mohm a. 10V, 10.3 mohm a. 4.5V
auf Bestellung 13572 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.66 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.76 EUR |
| 250+ | 1.62 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.26 EUR |
| 3000+ | 1.2 EUR |
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Technische Details SISS4402DN-T1-GE3 Vishay / Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V, Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc).
Weitere Produktangebote SISS4402DN-T1-GE3 nach Preis ab 1.12 EUR bis 2.68 EUR
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| SISS4402DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 40 V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS4402DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 40 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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