SISS4402DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc)
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Technische Details SISS4402DN-T1-GE3 Vishay Siliconix
Description: VISHAY - SISS4402DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 128 A, 2200 µohm, PowerPAK 1212-8S, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 40V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 128A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.5V, Verlustleistung: 65.7W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: PowerPAK 1212-8S, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 2200µohm.
Weitere Produktangebote SISS4402DN-T1-GE3 nach Preis ab 1.4 EUR bis 5.72 EUR
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SISS4402DN-T1-GE3 | Vishay / Siliconix |
MOSFETs N-Channel 100 V (D-S) MOSFET SO-8, 9.3 mohm a. 10V, 10.3 mohm a. 4.5V |
auf Bestellung 11928 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS4402DN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 40 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc) |
auf Bestellung 7780 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS4402DN-T1-GE3 | VISHAY |
Description: VISHAY - SISS4402DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 128 A, 2200 µohm, PowerPAK 1212-8S, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 128A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 65.7W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerPAK 1212-8S Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2200µohm |
auf Bestellung 4770 Stücke: Lieferzeit 14-21 Tag (e) |
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| SISS4402DN-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs N-Channel 100 V (D-S) MOSFET SO-8, 9.3 mohm a. 10V, 10.3 mohm a. 4.5V
MOSFETs N-Channel 100 V (D-S) MOSFET SO-8, 9.3 mohm a. 10V, 10.3 mohm a. 4.5V
auf Bestellung 11928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.65 EUR |
| 10+ | 2.28 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.59 EUR |
| 3000+ | 1.4 EUR |
| SISS4402DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc)
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc)
auf Bestellung 7780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.74 EUR |
| 10+ | 3.03 EUR |
| 50+ | 2.31 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.67 EUR |
| SISS4402DN-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SISS4402DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 128 A, 2200 µohm, PowerPAK 1212-8S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 128A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 65.7W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: PowerPAK 1212-8S
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
Description: VISHAY - SISS4402DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 128 A, 2200 µohm, PowerPAK 1212-8S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 128A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 65.7W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: PowerPAK 1212-8S
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
auf Bestellung 4770 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 5.72 EUR |
| 69+ | 3.42 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.58 EUR |