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SISS4402DN-T1-GE3

SISS4402DN-T1-GE3 Vishay Siliconix


siss4402dn.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc)
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.07 EUR
6000+1.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SISS4402DN-T1-GE3 Vishay Siliconix

Description: N-CHANNEL 40 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V, Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc).

Weitere Produktangebote SISS4402DN-T1-GE3 nach Preis ab 1.18 EUR bis 3.27 EUR

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SISS4402DN-T1-GE3 SISS4402DN-T1-GE3 Hersteller : Vishay Siliconix siss4402dn.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 128A (Tc)
auf Bestellung 11480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
10+2.12 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.29 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SISS4402DN-T1-GE3 SISS4402DN-T1-GE3 Hersteller : Vishay / Siliconix siss4402dn.pdf MOSFETs N-Channel 100 V (D-S) MOSFET SO-8, 9.3 mohm a. 10V, 10.3 mohm a. 4.5V
auf Bestellung 12613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.27 EUR
10+2.24 EUR
25+2.22 EUR
100+1.78 EUR
500+1.42 EUR
1000+1.29 EUR
3000+1.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH