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SISS4409DN-T1-GE3

SISS4409DN-T1-GE3 Vishay / Siliconix

siss4409dn.pdf Hersteller: Vishay / Siliconix
MOSFETs PPAK1212 P-CH 40V 17.2A
auf Bestellung 702 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.55 EUR
10+1.8 EUR
100+1.24 EUR
500+0.99 EUR
1000+0.91 EUR
3000+0.8 EUR
6000+0.78 EUR
Mindestbestellmenge: 2
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Technische Details SISS4409DN-T1-GE3 Vishay / Siliconix

Description: P-CHANNEL 40 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.2A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V.

Weitere Produktangebote SISS4409DN-T1-GE3 nach Preis ab 0.86 EUR bis 2.66 EUR

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SISS4409DN-T1-GE3 SISS4409DN-T1-GE3 Hersteller : Vishay Siliconix siss4409dn.pdf Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.2A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
11+1.71 EUR
100+1.17 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SISS4409DN-T1-GE3 SISS4409DN-T1-GE3 Hersteller : Vishay Siliconix siss4409dn.pdf Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.2A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
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