SISS5208DN-T1-GE3 Vishay / Siliconix
auf Bestellung 5930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1 EUR |
| 3000+ | 0.85 EUR |
| 24000+ | 0.83 EUR |
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Technische Details SISS5208DN-T1-GE3 Vishay / Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 1.3mOhm @ 10A, 8V, Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): +8V, -7V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V.
Weitere Produktangebote SISS5208DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SISS5208DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 1.3mOhm @ 10A, 8V Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): +8V, -7V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
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