SISS52DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 47.1A/162A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.1A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.69 EUR |
| 6000+ | 0.64 EUR |
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Technische Details SISS52DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 47.1A/162A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47.1A (Ta), 162A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 15 V.
Weitere Produktangebote SISS52DN-T1-GE3 nach Preis ab 0.67 EUR bis 2.27 EUR
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SISS52DN-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 30V N-CHANNEL (D-S)MOS PWRPK |
auf Bestellung 7254 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS52DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 47.1A/162A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.1A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 15 V |
auf Bestellung 6148 Stücke: Lieferzeit 10-14 Tag (e) |
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