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SISS54DN-T1-GE3

SISS54DN-T1-GE3 Vishay Siliconix

siss54dn.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
auf Bestellung 2963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
10+2.03 EUR
100+1.51 EUR
500+1.21 EUR
1000+1.17 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SISS54DN-T1-GE3 Vishay Siliconix

Description: N-CHANNEL 30-V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc), Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V.

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SISS54DN-T1-GE3 SISS54DN-T1-GE3 Hersteller : Vishay / Siliconix siss54dn.pdf MOSFETs PPAK1212 N-CH 30V 51.1A
auf Bestellung 14524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.92 EUR
10+2.04 EUR
100+1.53 EUR
500+1.21 EUR
1000+1.18 EUR
3000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SISS54DN-T1-GE3 SISS54DN-T1-GE3 Hersteller : Vishay Siliconix siss54dn.pdf Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
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SISS54DN-T1-GE3 Hersteller : VISHAY siss54dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 148.5A; Idm: 300A
Mounting: SMD
On-state resistance: 1.5mΩ
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Power dissipation: 42W
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 148.5A
Pulsed drain current: 300A
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchFET®
Gate-source voltage: -12...16V
Gate charge: 72nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH