SISS5623DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 36.3A (Tc)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.16 EUR |
| 6000+ | 1.09 EUR |
| 9000+ | 1.07 EUR |
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Technische Details SISS5623DN-T1-GE3 Vishay Siliconix
Description: P-CHANNEL 60 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 30 V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 36.3A (Tc).
Weitere Produktangebote SISS5623DN-T1-GE3 nach Preis ab 1.24 EUR bis 4.03 EUR
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SISS5623DN-T1-GE3 | Vishay Siliconix |
Description: P-CHANNEL 60 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Part Status: Active Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 30 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 36.3A (Tc) |
auf Bestellung 26193 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS5623DN-T1-GE3 | Vishay / Siliconix |
MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK 1212-8S, 24 mohm a. 10V, 46 mohm a. 4.5V |
auf Bestellung 2599 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS5623DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: P-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 36.3A (Tc)
Description: P-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 36.3A (Tc)
auf Bestellung 26193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.01 EUR |
| 10+ | 2.58 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.3 EUR |
| SISS5623DN-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK 1212-8S, 24 mohm a. 10V, 46 mohm a. 4.5V
MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK 1212-8S, 24 mohm a. 10V, 46 mohm a. 4.5V
auf Bestellung 2599 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.03 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.31 EUR |
| 3000+ | 1.24 EUR |