SISS5808DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 66.6A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.18 EUR |
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Technische Details SISS5808DN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 66.6A (Tc), Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V.
Weitere Produktangebote SISS5808DN-T1-GE3 nach Preis ab 1.19 EUR bis 4.22 EUR
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SISS5808DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 66.6A (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS5808DN-T1-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 11400 Stücke: Lieferzeit 213-217 Tag (e) |
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| SISS5808DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 66.6A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 24nC Technology: TrenchFET® Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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| SISS5808DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 66.6A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 24nC Technology: TrenchFET® |
Produkt ist nicht verfügbar |