auf Bestellung 2331 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.13 EUR |
| 10+ | 1.75 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 0.94 EUR |
| 3000+ | 0.83 EUR |
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Technische Details SISS588DN-T1-GE3 Vishay Semiconductors
Description: N-CHANNEL 80 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V.
Weitere Produktangebote SISS588DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SISS588DN-T1-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36.3W Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 46.5A On-state resistance: 9.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 28.5nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SISS588DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V |
Produkt ist nicht verfügbar |
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SISS588DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 58.1A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V |
Produkt ist nicht verfügbar |
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| SISS588DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36.3W Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 46.5A On-state resistance: 9.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 28.5nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |