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SISS60DN-T1-GE3

SISS60DN-T1-GE3 Vishay Siliconix

siss60dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50.1/181.8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.87 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SISS60DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 50.1/181.8A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc), Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 15 V.

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SISS60DN-T1-GE3 SISS60DN-T1-GE3 Hersteller : Vishay / Siliconix siss60dn.pdf MOSFETs POWRPK N CHAN 30V
auf Bestellung 23795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.38 EUR
10+1.83 EUR
100+1.29 EUR
500+1.05 EUR
1000+0.97 EUR
3000+0.96 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SISS60DN-T1-GE3 SISS60DN-T1-GE3 Hersteller : Vishay Siliconix siss60dn.pdf Description: MOSFET N-CH 30V 50.1/181.8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 15 V
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+1.80 EUR
100+1.27 EUR
500+1.03 EUR
1000+0.96 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SISS60DN-T1-GE3 Hersteller : VISHAY siss60dn.pdf SISS60DN-T1-GE3 SMD N channel transistors
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