SISS73DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 4.4A/16.2A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 719 pF @ 75 V
Produktrezensionen
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Technische Details SISS73DN-T1-GE3 Vishay Siliconix
Description: VISHAY - SISS73DN-T1-GE3 - P-CHANNEL 150-V D-S MOSFET 42AJ0523, tariffCode: 0, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 150V, rohsCompliant: YES, Dauer-Drainstrom Id: 16.2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 65.8W, SVHC: To Be Advised, Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: P Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.125ohm, directShipCharge: 25.
Weitere Produktangebote SISS73DN-T1-GE3 nach Preis ab 0.76 EUR bis 4.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SISS73DN-T1-GE3 | Vishay |
Trans MOSFET P-CH 150V 4.4A 8-Pin PowerPAK 1212-S EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SISS73DN-T1-GE3 | Vishay |
Trans MOSFET P-CH 150V 4.4A 8-Pin PowerPAK 1212-S EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SISS73DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 4.4A/16.2A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 719 pF @ 75 V |
auf Bestellung 5011 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS73DN-T1-GE3 | Vishay Semiconductors |
MOSFETs PWRPK 150V 16.2A P-CH MOSFET |
auf Bestellung 66905 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS73DN-T1-GE3 | VISHAY |
Description: VISHAY - SISS73DN-T1-GE3 - P-CHANNEL 150-V D-S MOSFET 42AJ0523 tariffCode: 0 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 16.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 65.8W SVHC: To Be Advised Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: P Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.125ohm directShipCharge: 25 |
auf Bestellung 5910 Stücke: Lieferzeit 14-21 Tag (e) |
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| SISS73DN-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET P-CH 150V 4.4A 8-Pin PowerPAK 1212-S EP T/R
Trans MOSFET P-CH 150V 4.4A 8-Pin PowerPAK 1212-S EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 2.12 EUR |
| 118+ | 1.48 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.04 EUR |
| 3000+ | 0.93 EUR |
| 6000+ | 0.89 EUR |
| SISS73DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 150V 4.4A 8-Pin PowerPAK 1212-S EP T/R
Trans MOSFET P-CH 150V 4.4A 8-Pin PowerPAK 1212-S EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 63+ | 2.81 EUR |
| 84+ | 2.03 EUR |
| 118+ | 1.38 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.94 EUR |
| 3000+ | 0.82 EUR |
| 6000+ | 0.76 EUR |
| SISS73DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 4.4A/16.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 719 pF @ 75 V
Description: MOSFET P-CH 150V 4.4A/16.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 719 pF @ 75 V
auf Bestellung 5011 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.94 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.24 EUR |
| SISS73DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs PWRPK 150V 16.2A P-CH MOSFET
MOSFETs PWRPK 150V 16.2A P-CH MOSFET
auf Bestellung 66905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.96 EUR |
| 10+ | 2.53 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.25 EUR |
| 3000+ | 1.14 EUR |
| SISS73DN-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SISS73DN-T1-GE3 - P-CHANNEL 150-V D-S MOSFET 42AJ0523
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 16.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 65.8W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.125ohm
directShipCharge: 25
Description: VISHAY - SISS73DN-T1-GE3 - P-CHANNEL 150-V D-S MOSFET 42AJ0523
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 16.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 65.8W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.125ohm
directShipCharge: 25
auf Bestellung 5910 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 4.34 EUR |
| 71+ | 3.27 EUR |
| 77+ | 2.78 EUR |
| 83+ | 2.59 EUR |
| 100+ | 2.31 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.83 EUR |
| 2500+ | 1.73 EUR |