| Anzahl | Preis |
|---|---|
| 1+ | 3.26 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.02 EUR |
| 3000+ | 0.93 EUR |
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Technische Details SISS76LDN-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 70 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V, Supplier Device Package: PowerPAK® 1212-8SH, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SH, Packaging: Tape & Reel (TR).
Weitere Produktangebote SISS76LDN-T1-GE3 nach Preis ab 0.83 EUR bis 2.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SISS76LDN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 70V 19.6A/67.4A PPAKInput Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 70 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| SISS76LDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 70 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Cut Tape (CT) |
auf Bestellung 5977 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SISS76LDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.83 EUR |
| SISS76LDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
auf Bestellung 5977 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.04 EUR |
| 12+ | 1.49 EUR |
| 100+ | 1.2 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.91 EUR |