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SISS78LDN-T1-GE3

SISS78LDN-T1-GE3 Vishay / Siliconix

siss78ldn.pdf Hersteller: Vishay / Siliconix
MOSFETs POWRPK N CHAN 70V
auf Bestellung 49777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.57 EUR
10+1.81 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.94 EUR
3000+0.84 EUR
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Technische Details SISS78LDN-T1-GE3 Vishay / Siliconix

Description: MOSFET N-CH 70V 19.4A/66.7A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 66.7A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 35 V.

Weitere Produktangebote SISS78LDN-T1-GE3 nach Preis ab 0.78 EUR bis 2.48 EUR

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SISS78LDN-T1-GE3 Hersteller : Vishay Siliconix siss78ldn.pdf Description: MOSFET N-CH 70V 19.4A/66.7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 66.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 35 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.78 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SISS78LDN-T1-GE3 Hersteller : Vishay Siliconix siss78ldn.pdf Description: MOSFET N-CH 70V 19.4A/66.7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 66.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 35 V
auf Bestellung 5877 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
11+1.74 EUR
100+1.30 EUR
500+1.03 EUR
1000+0.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SISS78LDN-T1-GE3 Hersteller : VISHAY siss78ldn.pdf SISS78LDN-T1-GE3 SMD N channel transistors
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