SiSS98DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 200V 14.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.64 EUR |
| 6000+ | 0.59 EUR |
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Technische Details SiSS98DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 200V 14.1A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 7A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 7.5 V, Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V.
Weitere Produktangebote SiSS98DN-T1-GE3 nach Preis ab 0.73 EUR bis 2.39 EUR
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SiSS98DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 200V Vds 20V Vgs PowerPAK 1212-8S |
auf Bestellung 34049 Stücke: Lieferzeit 10-14 Tag (e) |
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SiSS98DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 14.1A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 7A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V |
auf Bestellung 6920 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiSS98DN-T1-GE3 | Hersteller : VISHAY |
SISS98DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |