SIZ254DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 70V 11.7A 8PWRPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Drain to Source Voltage (Vdss): 70V
Power - Max: 4.3W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Technische Details SIZ254DT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ254DT-T1-GE3 - Dual-MOSFET, n-Kanal, 70 V, 70 V, 32.5 A, 32.5 A, 0.0129 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 32.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 70V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 32.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0129ohm, Verlustleistung, p-Kanal: 33W, Drain-Source-Spannung Vds, n-Kanal: 70V, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 33W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SIZ254DT-T1-GE3 nach Preis ab 0.84 EUR bis 3.36 EUR
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SIZ254DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 70V 11.7A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active |
auf Bestellung 4146 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ254DT-T1-GE3 | Vishay / Siliconix |
MOSFETs PPAIR3X3 2NCH 70V 11.7A |
auf Bestellung 4633 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ254DT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ254DT-T1-GE3 - Dual-MOSFET, n-Kanal, 70 V, 70 V, 32.5 A, 32.5 A, 0.0129 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 32.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 70V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 32.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0129ohm Verlustleistung, p-Kanal: 33W Drain-Source-Spannung Vds, n-Kanal: 70V SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 33W Betriebstemperatur, max.: 150°C |
auf Bestellung 4610 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIZ254DT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 70V 11.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
Description: MOSFET 2N-CH 70V 11.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
auf Bestellung 4146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.96 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.91 EUR |
| SIZ254DT-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs PPAIR3X3 2NCH 70V 11.7A
MOSFETs PPAIR3X3 2NCH 70V 11.7A
auf Bestellung 4633 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.36 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.89 EUR |
| 3000+ | 0.84 EUR |
| SIZ254DT-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SIZ254DT-T1-GE3 - Dual-MOSFET, n-Kanal, 70 V, 70 V, 32.5 A, 32.5 A, 0.0129 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 32.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 70V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 32.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0129ohm
Verlustleistung, p-Kanal: 33W
Drain-Source-Spannung Vds, n-Kanal: 70V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 33W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SIZ254DT-T1-GE3 - Dual-MOSFET, n-Kanal, 70 V, 70 V, 32.5 A, 32.5 A, 0.0129 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 32.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 70V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 32.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0129ohm
Verlustleistung, p-Kanal: 33W
Drain-Source-Spannung Vds, n-Kanal: 70V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 33W
Betriebstemperatur, max.: 150°C
auf Bestellung 4610 Stücke:
Lieferzeit 14-21 Tag (e)