Produkte > VISHAY SILICONIX > SIZ260DT-T1-GE3
SIZ260DT-T1-GE3

SIZ260DT-T1-GE3 Vishay Siliconix

siz260dt.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 8.9A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.73 EUR
6000+0.68 EUR
9000+0.67 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SIZ260DT-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 80V 8.9A 8POWERPAIR, Packaging: Cut Tape (CT), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.3W (Ta), 33W (Tc), FET Type: N-Channel, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V, Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair® (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V.

Weitere Produktangebote SIZ260DT-T1-GE3 nach Preis ab 0.78 EUR bis 2.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIZ260DT-T1-GE3 SIZ260DT-T1-GE3 Hersteller : Vishay Semiconductors siz260dt.pdf MOSFETs DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S
auf Bestellung 7205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.55 EUR
10+1.71 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.87 EUR
3000+0.78 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIZ260DT-T1-GE3 SIZ260DT-T1-GE3 Hersteller : Vishay Siliconix siz260dt.pdf Description: MOSFET 2N-CH 80V 8.9A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 13846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SIZ260DT-T1-GE3 SIZ260DT-T1-GE3 Hersteller : VISHAY siz260dt.pdf Description: VISHAY - SIZ260DT-T1-GE3 - Dual-MOSFET, n-Kanal, 80 V, 80 V, 24.7 A, 24.7 A, 0.0204 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 24.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 80V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 24.7A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0204ohm
Verlustleistung, p-Kanal: 33W
Drain-Source-Spannung Vds, n-Kanal: 80V
euEccn: NLR
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0204ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 33W
Betriebstemperatur, max.: 150°C
SVHC: Lead (07-Nov-2024)
auf Bestellung 20408 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIZ260DT-T1-GE3 Hersteller : VISHAY siz260dt.pdf SIZ260DT-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH