SIZ270DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.91 EUR |
6000+ | 0.87 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIZ270DT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ270DT-T1-GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 19.5 A, 19.5 A, 0.0302 ohm, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 19.5A, Dauer-Drainstrom Id, p-Kanal: 19.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 100V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 19.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0302ohm, Verlustleistung Pd: 33W, Gate-Source-Schwellenspannung, max.: 2.4V, Verlustleistung, p-Kanal: 33W, Drain-Source-Spannung Vds, n-Kanal: 100V, euEccn: NLR, Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0302ohm, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 33W, Betriebswiderstand, Rds(on): 0.0302ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, SVHC: Lead (19-Jan-2021).
Weitere Produktangebote SIZ270DT-T1-GE3 nach Preis ab 0.93 EUR bis 2.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIZ270DT-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET Dual N-Ch 100V(D-S) |
auf Bestellung 11077 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
SIZ270DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) |
auf Bestellung 11593 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
SIZ270DT-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIZ270DT-T1-GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 19.5 A, 19.5 A, 0.0302 ohm tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 19.5A Dauer-Drainstrom Id, p-Kanal: 19.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 19.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0302ohm Verlustleistung Pd: 33W Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung, p-Kanal: 33W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0302ohm productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 33W Betriebswiderstand, Rds(on): 0.0302ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) |
auf Bestellung 14050 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
SIZ270DT-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 19.5A; 33W Drain-source voltage: 100V Drain current: 19.5A Polarisation: unipolar On-state resistance: 54.1/51.7mΩ Pulsed drain current: 40A Power dissipation: 33W Technology: TrenchFET® Kind of channel: enhanced Gate charge: 27nC Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SIZ270DT-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 19.5A; 33W Drain-source voltage: 100V Drain current: 19.5A Polarisation: unipolar On-state resistance: 54.1/51.7mΩ Pulsed drain current: 40A Power dissipation: 33W Technology: TrenchFET® Kind of channel: enhanced Gate charge: 27nC Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |