SIZ300DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 1.97 EUR |
| 10+ | 1.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIZ300DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 11A POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 16.7W, 31W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A, 28A, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair®, Part Status: Active.
Weitere Produktangebote SIZ300DT-T1-GE3 nach Preis ab 0.69 EUR bis 2.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIZ300DT-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs RECOMMENDED ALT SIZ3 |
auf Bestellung 1546 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SIZ300DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
 |
SIZ300DT-T1-GE3 Produktcode: 106566
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
||||||||||||||||
| SIZ300DT-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 28/11A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 28/11A Pulsed drain current: 40...30A Power dissipation: 31/16.7W Case: PowerPAIR® 3x3 Gate-source voltage: ±20V On-state resistance: 16.5/32mΩ Mounting: SMD Gate charge: 22/12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
|
|
SIZ300DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
SIZ300DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
SIZ300DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 11A POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 28A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® Part Status: Active |
Produkt ist nicht verfügbar |
|||||||||||||||
| SIZ300DT-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 28/11A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 28/11A Pulsed drain current: 40...30A Power dissipation: 31/16.7W Case: PowerPAIR® 3x3 Gate-source voltage: ±20V On-state resistance: 16.5/32mΩ Mounting: SMD Gate charge: 22/12nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |