Weitere Produktangebote SIZ300DT-T1-GE3 nach Preis ab 0.69 EUR bis 2.06 EUR
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SIZ300DT-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 11A POWERPAIRPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 28A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® Part Status: Active |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ300DT-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs RECOMMENDED ALT SIZ3 |
auf Bestellung 1546 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ300DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ300DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
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SIZ300DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 11A POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 28A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® Part Status: Active |
Produkt ist nicht verfügbar |