SIZ320DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 30/40A 8POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 25V 30/40A 8POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.6 EUR |
13+ | 1.38 EUR |
100+ | 0.96 EUR |
500+ | 0.8 EUR |
1000+ | 0.68 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIZ320DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 25V 30/40A 8POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 16.7W, 31W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V, Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Weitere Produktangebote SIZ320DT-T1-GE3 nach Preis ab 0.9 EUR bis 2.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIZ320DT-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3 |
auf Bestellung 3904 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
SIZ320DT-T1-GE3 | Hersteller : VISHAY | SIZ320DT-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
SIZ320DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 25V 30/40A 8POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
Produkt ist nicht verfügbar |