SIZ322DT-T1-GE3

Hersteller: Vishay Siliconix
MOSFET 2N-CH 25V 30A 8PWR33 Транзистори

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 30A 8PWR33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 16.7W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 30A 8PWR33
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 16.7W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA

Hersteller: Vishay / Siliconix
MOSFETs 25V Vds 16V Vgs PowerPAIR 3 x 3