Produkte > VISHAY SILICONIX > SIZ328DT-T1-GE3
SIZ328DT-T1-GE3

SIZ328DT-T1-GE3 Vishay Siliconix

siz328dt.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 11.1A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
16+1.11 EUR
100+0.77 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SIZ328DT-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 25V 11.1A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-Power33 (3x3), Part Status: Active.

Weitere Produktangebote SIZ328DT-T1-GE3 nach Preis ab 0.53 EUR bis 1.80 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIZ328DT-T1-GE3 SIZ328DT-T1-GE3 Hersteller : Vishay Semiconductors siz328dt.pdf MOSFETs 25V Vds 16V Vgs PowerPAIR 3 x 3
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.80 EUR
10+1.25 EUR
100+0.80 EUR
500+0.69 EUR
1000+0.63 EUR
3000+0.59 EUR
6000+0.53 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIZ328DT-T1-GE3 SIZ328DT-T1-GE3 Hersteller : Vishay Siliconix siz328dt.pdf Description: MOSFET 2N-CH 25V 11.1A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH